PART |
Description |
Maker |
ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10 |
3.3V In-System Programmable High Density SuperFAST?PLD 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44 CRYSTAL 16.0 MHZ 20PF SMD EE PLD, 13 ns, PQFP100 CRYSTAL 20.0 MHZ 20PF SMD RES 180K-OHM 1% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM 3.3V In-System Programmable High Density SuperFAST PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 280 MHz 3.3V in-system prommable superFAST high density PLD
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
ISPLSI2032VE ISPLSI2032VE-110LB49 ISPLSI2032VE-110 |
225 MHz 3.3V in-system prommable superFAST high density PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST PLD IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.3 IC,Normally-Closed Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 EE PLD, 13 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 13 ns, PQFP44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 6 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD 3.3在系统可编程高密度PLD的超快⑩ 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes In-System Programmable High Density PLD 100 MHz in-system prommable high density PLD
|
Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
|
ISPLSI2064V-100LJ84 ISPLSI2064V-100LJ84I ISPLSI206 |
3.3V High Density Programmable Logic 3.3V High Density Programmable Logic 3.3高密度可编程逻辑 3.3V High Density Programmable Logic EE PLD, 15 ns, PQCC84
|
Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
LTV8192M LTV-819-1S-TA LTV829S-V LTV-829S-TA LTV82 |
High Density Mounting Type Photocoupler 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER High Density Mounting Type Photocoupler 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER High Density Mounting Type Photocoupler(762.22 k) 高密度安装类型光电耦合62.22十一
|
Lite-On Technology, Corp.
|
SMB10J6.0 SMB10J6.0A SMB10J6.5 SMB10J6.5A SMB8J8.0 |
High Power Density Surface Mount TRANSZORB㈢ Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB垄莽 Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB庐 Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB? Transient Voltage Suppressors
|
Vishay Siliconix http://
|
SCHJ22.5K SCHJ15K SCHJ45K SCHJ37.5K |
High Voltage,High Density Standard Recovery Rectifier(反向电压45000V,温5℃时平均整流电流50mA,高压,高密度,标准恢复整流器) 高电压,高密度标准恢复整流(反向电压45000V,温5℃时平均整流电流0mA,高压,高密度,标准恢复整流器) High Voltage,High Density Standard Recovery Rectifier(反向电压37500V,温5℃时平均整流电流50mA,高压,高密度,标准恢复整流器) High Voltage,High Density Standard Recovery Rectifier(反向电压22500V,温5℃时平均整流电流50mA,高压,高密度,标准恢复整流器) STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
|
Semtech Corporation
|
ISPLSI5512VE-155LF256 ISPLSI5512VE-155LB272 ISPLSI |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. EE PLD, 10 ns, PBGA388 In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns.
|
LATTICE SEMICONDUCTOR CORP
|
ISPLSI5256VE-125LT100I ISPLSI5256VE-100LF256I ISPL |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. EE PLD, 10 ns, PBGA256 In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns.
|
Lattice Semiconductor, Corp. LATTICE SEMICONDUCTOR CORP
|
ISPLSI2032A-80LJ ISPLSIB2032 ISPLSIB2032-110LJ ISP |
(ISPLSI2032/A) In-System Programmable SuperFAST High Density PLD In-System Programmable High Density PLD
|
LATTICE[Lattice Semiconductor]
|
ISPLSI8600V-125LB272 ISPLSI8600V-125LB492 ISPLSI86 |
3.3V In-System Programmable SuperBIG High Density PLD 3.3V In-System Programmable SuperBIG⑩ High Density PLD
|
LATTICE[Lattice Semiconductor]
|
IDT72V36100 IDT72V36100L10PF IDT72V36100L15PF IDT7 |
3.3 VOLT HIGH-DENSITY SUPERSYNC⑩ II 36-BIT FIFO 3.3 VOLT HIGH-DENSITY SUPERSYNC II 36-BIT FIFO
|
IDT[Integrated Device Technology]
|